Analogue to digital converter technology integrates CMOS image sensors into portable system-on-a-chip (SoC) devices. Since the power consumption of column parallel ADC in CMOS image sensors significantly affects overall power management, the analog-to-digital converter (ADC) has become the most important need. One of the key technologies that aids in getting a high pixel rate from CMOS image sensors is the column parallel ADC. For the submicro region's design, single gate MOSFETs are enough. When developing down to the ultra sub area, single gate MOSFETSs have short channel effects that affect performance requirements. Multi-gate MOSFETs are an efficient way to construct the ultra sub area. The advantages of switching to FinFET technology lay more in the power savings than in the performance boost. For the purpose of implementing 14nm FinFET technology, the SS-ADC design was chosen.

Mosfets, Finfet Technology, ADC, CMOS Image Sensors, and Short Channel Effects.