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Research Article | Open Access
Volume 13 2021 | None
SOC COMPATIBLE 1T1C FERAM MEMORY ARRAY BASED ON FERROELECTRIC HF0. 5ZR0. 5O2
P.RAMA THULASI, M.CHENNAIAH
Pages: 3467-3474
Abstract
Prior research have shown that the film thickness scaling of ferroelectric Hf0.5Zr0.5O2 (HZO) enables hafnium-based onetransistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) to achieve improved cycle tolerance for severe breakdown, while operating at lower voltages. This study expands upon earlier research by conducting a comprehensive analysis of current studies on FeRAM-related devices, specifically focusing on the scaling of film thickness. We conducted an experimental study to confirm the advantage of film thickness scaling in a 1T1C FeRAM array with different HZO thicknesses of 8 nm and 10 nm. We used small capacitors with areas of 0.20, 0.40, and 1.00 ┬Ám2 under practical operating conditions. Our results show that the 8-nm sample with a smaller capacitance area exhibited higher reliability, providing the first evidence of the cycling tolerance advantage. In order to validate the outcome, time zero dielectric breakdown (TZDB) and time dependent dielectric breakdown (TDDB) experiments were performed on samples measuring 8-nm and 10a-nm, respectively.
Keywords
The index terms used in this study are capacitor, ferroelectric random-access memory, hafnium oxide, thickness scaling, and zirconium oxide.
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